物理的特性
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シリコンは地球の地殻で自然に存在する元素です。伝導性を持ち、理想的な半導体材料であるため、直径最大300 mmの半導体ウェハの主要材料となっています。

SiFusionの多結晶シリコンは無配向性結晶状のシリコン元素です。

Physical Properties of Silicon

 
Identification Silicon
Symbol Si
State (std. Cond.) Solid
Atomic 28.086
Melting Point, ºC 1,414
Boiling Point, ºC 2,878
Critical Temperature, ºC 4,886
Critical Pressure, atm 530
Critical Volume, cm3/gmol 232.6
Critical Density, g/cm3 0.1207
Vapor Pressure, mm Hg 2.8(10-4) (at m.p.)
Heat of Vaporization, cal/g 3,812 (at m.p.)
Heat of Sublimation, cal/g 4,705 (at m.p.)
Heat of Fusion, cal/g 264 (at m.p.)
Liquid Heat Cap., cal/g mol ºC 6.755 (at m.p.)
Solid Heat Cap., cal/g mol ºC 4.78 (at 25ºC)
Solid heat Cap., JKg/m mol (at 25ºC) 703
Liquid Density 2.533 (at m.p.)
Solid Density 2.329 (at 25ºC)
Percent Expansion on Freezing 10% (at m.p.)
Surface T 736 (at m.p.)
Liquid Viscosity 0.88 (at m.p.)
Liquid Thermal Cond., cal/sec cmºC 1.025 (10-3) (at m.p.)
Solid thermal cond., cal/sec cmºC 0.353 (at 25ºC)
Solid Thermal Cond., W/m 163
Hardness, knops Kg/mm 1150
Hardness, mobs 7
Bulk Modules, dyne/cm2 9.8 (1011)
Bulk Modules, Gpa 102
Young Modulus, dyne/cm2 1.3 (1012)
Young Modulus, Gpa 131
Coefficient of Thermal Expansion m/ ºC 2.6 (10-6)
Specific Heat, cal/g ºC 0.18
Atomic Density, atom cm2 4.96 (1022)
Refractive Index, 4µ 3.4255
dn/dt ºC 1.6 (10-4)
Percent Transmission Uncoated, 4µ 53.8
Transmission Range, µ 1.2-7 & 45-100
Dielectric 11.8
Elastic Constant, C11 dyne/cm2 1.656 (1012)
Elastic Constant, C12 dyne/cm2 0.639 (1012)
Elastic Constant, C14 dyne/cm2 0.795 (1012)
Rupture Modules, bending, kg/cm2 700-3,500
Breaking Strength, Compression kg/cm2 4,900-5,600
Breaking Strength, Compression Mpa 120
Poisson Ratio 0.28


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